Author profile
Scopus
AMS MathSciNet
Research articles
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J. Fuhrmann, D. H. Doan,
A. Glitzky, M. Liero, and G. Nika:
Unipolar drift-diffusion simulation of S-shaped current-voltage relations
for organic semiconductor devices,
Finite Volumes for Complex Applications IX
– Methods, Theoretical Aspects, Examples.
Springer Proc. Math. Stat. 323 (2020), pp. 625–633,
WIAS Preprint 2660.
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D. H. Doan,
A. Fischer, J. Fuhrmann, A. Glitzky, and M. Liero:
Drift-diffusion simulation of S-shaped current-voltage relations
for organic semiconductor devices,
WIAS Preprint 2630 (2019).
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Y. Zheng, A. Fischer, M. Sawatzki, D. H. Doan,
M. Liero, A. Glitzky, S. Reineke, and S. C. B. Mannsfeld:
Introducing pinMOS memory: a novel, nonvolatile organic memory device
Adv. Funct. Mater. 30.4 (2020), 1907119.
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D. H. Doan, A. Glitzky, and M. Liero:
Analysis of a drift–diffusion model for organic semiconductor devices
Z. Angew. Math. Phys. 70 (2019), 55,
WIAS Preprint 2493.
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F. M. Sawatzki, D. H. Doan,
H. Kleemann, M. Liero, A. Glitzky, Th. Koprucki, and K. Leo:
Balance of horizontal and vertical charge transport in organic field-effect transistors
Phys. Rev. Applied 10.3 (2018), 034069.
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F. M. Sawatzki, A. A. Hauke, D. H. Doan,
P. Formanek, D. Kasemann, Th. Koprucki, and K. Leo:
On razors edge: influence of the source insulator edge on the charge
transport of vertical organic field effect transistors
MRS Advances 2.23 (2017), pp. 1249–1257
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P. Farrell, N. Rotundo, D. H. Doan,
M. Kantner, J. Fuhrmann, and Th. Koprucki:
Drift-diffusion models
Handbook of Optoelectronic Device Modeling and Simulation:
Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods,
CRC Press, vol. 2 (2017), pp. 733–771,
WIAS Preprint 2263.
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F. Kaschura, A. Fischer, M. P. Klinger,
D. H. Doan,
Th. Koprucki, A. Glitzky, D. Kasemann, J. Widmer, and K. Leo:
Operation mechanism of high performance organic permeable base transistors
with an insulated and perforated base electrode
J. Appl. Phys. 120 (2016), 094501.
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Th. Koprucki, N. Rotundo, P. Farrell,
D. H. Doan, J. Fuhrmann:
On thermodynamic consistency of a Scharfetter–Gummel scheme based
on a modified thermal voltage for drift-diffusion equations
with diffusion enhancement,
Opt. Quant. Electron. 47 (2015), 1327,
WIAS Preprint 2013.
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D. H. Doan and A. Yagi:
Rosenbrock strong stability-preserving methods for
convection–diffusion–reaction equations
Japan J. Indust. Appl. Math. 31.2 (2014), pp. 401–417.
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D. H. Doan and A. Yagi:
Longtime behavior of solutions to chemotaxis-proliferation model with three variables
Discrete Contin. Dyn. Syst. - A 32 (2012), pp. 3957–3974.
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D. H. Doan and A. Yagi:
Numerical computations and pattern formation for chemotaxis-growth model
Sci. Math. Jpn. 70.2 (2009), pp. 205–211.
Theses
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PhD, Osaka University.
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Diploma, University Hanoi.
Miscellaneous
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D. H. Doan,
J. Fuhrmann, A. Glitzky, and M. Liero:
Electrothermal behavior of organic semiconductors
Scientific Highlights, WIAS Annual Research Report (2018), pp. 34–38.
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N. Rotundo, P. Farrell, D. H. Doan,
J. Fuhrmann, M. Kantner, and Th. Koprucki:
New approaches to numerical simulation of current flow in semiconductor devices
Scientific Highlights, WIAS Annual Research Report (2016), pp. 20–24.
